2SC1610

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1610 DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 150 100 6 10 100 175 -55~175 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=1m A; IE=0 IE=1mA; IC=0 IC=10 A;IB=1 A IC=10 A;IB=1 A VCB=100V; IE=0 VCE=60V; IB=0 VEB=6V; IC=0 IC=5A ; VCE=5V 30 MIN 100 150 6 SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE 2SC1610 TYP. MAX UNIT V V V 1.0 2.0 0.1 1.0 0.1 160 V V mA m...