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M02N60B Dataheets PDF



Part Number M02N60B
Manufacturers Stanson Technology
Logo Stanson Technology
Description N Channel MOSFET
Datasheet M02N60B DatasheetM02N60B Datasheet (PDF)

N Channel MOSFET www.DataSheet4U.com 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1 2 3 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation T.

  M02N60B   M02N60B


M02N60 M02N60B NS0068


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