N Channel MOSFET www.DataSheet4U.com 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature
1 2 3 1.Gate 2.Drain 3.Source
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