CHA1077A

CHA1077a www.DataSheet4U.com RoHS COMPLIANT W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077a is a W-band monolithic 3stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on P-HEMT process: 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT +V -V W-band amplifier block-diagram Main Features W-band low noise amplifier High gain Wide operating frequency range High temperature range On-chip self biasing Additional external resistor allows to choose getting more gain instead of a minimum noise factor Automatic assembly oriented Low DC power consumption BCB layer protection Chip size: 2.6 x 1.32 x 0.1mm Small signal gain Main Characteristics Tamb = +25°C Symbol F_op G_lin NF P_1dB Parameter Operating frequency Small signal gain Noise figure Output power at 1dB gain compression Min 76 15 4.5 9 Typ Max 77 Unit GHz dB dB dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. DSCHA1077a6013 - 13 Jan 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA1077a www.DataSheet4U.com W-band LNA Electrical Characteristics Full operating temp...