Document
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2SC4742
Silicon NPN Triple Diffused
Application
Character display horizontal deflection output
Feature
• High breakdown voltage VCES = 1500 V • Built-in damper diode type
Outline
TO-3P
2
1. Base 2. Collector (Flange) 3. Emitter
1 ID
1
2
3
3
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2SC4742
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC* Tj Tstg ID
1
Ratings 1500 6 6 7 16 50 150 –55 to +150 7
Unit V V A A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 — — — — — — Typ — — — — — — — Max — 500 25 2.0 1.5 2.0 0.4 V V V µs Unit V µA Test conditions IE = 400 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 5 A, IB = 1.25 A IC = 5 A, IB = 1.25 A IF = 6 A ICP = 5 A, IB1 = 1 A, IB2 = –2 A
2
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