IXFK43N60

ADVANCE INFORMATION HiPerFETTM Power MOSFET Single MOSFET Die www.DataSheet4U.com VDSS I D25 43A 40A 43A 40A RDS(on) 0.13W 0.15W 0.13W 0.15W trr 200ns 200ns 200ns 200ns IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 600V 600V 600V 600V TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFK 43N60 40N60 VDSS VDGR VGS VGSM ID25 IDM‚ IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s T J = 25°C to 150°C T J = 25°C to 150°C Continuous Transient TC = 25°C T C = 25 ° C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C 43 172 43 60 5 560 -55 ... +150 150 -55 ... +150 300 N/A N/A 0.9/6 N/A 10 N/A 2500 3000 600 600 ±20 ±30 40 160 40 43 172 43 60 5 600 IXFN 43N60 IXFN 40N60 V V V V 40 160 40 A A A mJ V/ns W °C °C °C °C V~ V~ G = Gate S = Source D G D S 600 600 ±20 ±30 D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G S D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · DC-DC converters · Synchro...