BLF573S

BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.2 dB ‹ Efficiency = 70 % „ Easy power control „ Integrated ESD protection „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (HF and VHF band) „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ Industrial, scientific and medical applications „ Broadcast transmitter applications NXP Semiconductors BLF573; BLF573S HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF573 (SOT502A) 1 drain 2 gate 3 source BLF573S (SOT502B) 1 drain 2 gate 3 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 11 3 [1] 22 3 sym112 11 3 [1] 22 3 sym112 Table 3. Ordering information Type number Package Name Descripti...