SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1163
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
2SC1163
DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment
PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute Maximun Ratings (Ta=25? )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 300 300 4 0.1 20.8 150 -65~150 UNIT V V V A W ? ?
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ? /W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1163
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1.0mA;IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=100µA;IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA;IC=0
4
V
VCEsat
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=50mA ;IB=5mA
1.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
10
µA
hFE
DC curr...