SPN3055
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3055 is the N-Channel logic enhancement mode power field e...
SPN3055
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3055 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications
APPLICATIONS Power Management in Desktop Computer DC/DC Converter LCD Display inverter
FEATURES 30V/12A,RDS(ON)=60mΩ@VGS=10V 30V/6A,RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-252-2L package design
PIN CONFIGURATION ( TO-252-2L )
PART MARKING
2020/04/28 Ver.6
Page 1
SPN3055
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN3055T252RGB
TO-252-2L
※ SPN3055T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking SPN3055
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 10A , VD = 20V. )...