SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1106
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
2SC1106
DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage
regulator ,inverter and switching mode power supply applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 350 250 6 2 80 150 -55~150 UNIT V V V A W ? ?
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1106
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
250
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
350
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=350V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=0.2A ; VCE=5V
30
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power Tr...