Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1568
DESCRIPTION ·With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -7 -4 -6 30 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB1568
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA; IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA; IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ; IB=-4mA
-1.0
-3.0
V
ICBO
Collector cut-off current
VCB=-80V;IE=0
-100
µA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-2A ; VCE=-3V
1000
10000
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
35
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V;f=10MHz
12
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1568
Fig.2 Outline dimensions
3
.