2SB1495

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1495 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -8 -3 -5 -0.3 20 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-1.5A ; IB=-1.5mA IC=-1.5A ; IB=-1.5mA VCB=-100V;IE=0 VEB=-8V;IC=0 IC=-1A ; VCE=-2V IC=-2A ; VCE=-2V 2000 2000 MIN -100 2SB1495 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V -1.5 -2.0 -10 -4.0 V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-1.5mA VCC?-30V ,RL=20A 0.5 1.0 0.4 µs µs µs ...