2SB1481

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1481 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 ±4 ±6 25 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=-10mA; IB=0 IC=-3A ; IB=-6mA IC=-3A ; IB=-6mA VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=1A ; IB=0 2000 1000 MIN -100 2SB1481 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VECO TYP. MAX UNIT V -1.5 -2.0 -2 -2.5 V V µA mA 2.0 V ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC@-30V; RL=10A 0.15 0.80 0.40 µs...