IRFR3607PBF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97312B IRFR3607PbF IRFU3607PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) S ID (Package Limited) 75V 7.34mΩ c 9.0mΩ 80A 56A D S S D G G D-Pak I-Pak IRFR3607PbF IRFU3607PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) d Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics e EAS (Thermally limited) Single Pulse Avalanche Energy Ãd IAR Avalanche Current g EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter k Junction-to-Case j Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Max. 80™ 56™ 56 310 140 0.96 ± 20 27 -55 to + 175 300 120 46 14 Typ. ––– ––– ––– Max. 1.045 50 110 Units A W...