Power MOSFET
Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness l Fully Characterized Capacitance and
Avalanche SOA l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97312B
IRFR3607PbF IRFU3607PbF
HEXFET® Power MOSFET
D
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S
ID (Package Limited)
75V 7.34mΩ
c 9.0mΩ
80A
56A
D
S
S
D
G
G
D-Pak
I-Pak
IRFR3607PbF IRFU3607PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
e EAS (Thermally limited) Single Pulse Avalanche Energy
Ãd IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
k Junction-to-Case j Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
Max.
80 56
56 310 140 0.96 ± 20 27 -55 to + 175
300
120 46 14
Typ. ––– ––– –––
Max. 1.045
50 110
Units A
W...
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