IRFB31N20DPBF

www.DataSheet4U.com PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Current TO-262 TO-220AB D2Pak IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies l Telecom 48V Input DC/DC Active Clamp Reset Forward Converter Notes  through † are on page 11 www.irf.com 1 3/1/04 www.DataSheet4U.com IRFB/S/SL31N20DPbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage...