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K7J323682M

Samsung semiconductor

(K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

K7J323682M K7J321882M www.DataSheet4U.com Document Title 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 1Mx36-bit, 2Mx18-bit DDR II ...


Samsung semiconductor

K7J323682M

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K7J323682M K7J321882M www.DataSheet4U.com Document Title 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff 2. Update JTAG test conditions. 3. Reserved pin for high density name change from NC to Vss/SA 4. Delete AC test condition about Clock Input timing Reference Level 5. Delete clock description on page 2 and add HSTL I/O comment 6. Deleted R/W control pin description on page 2 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 1. Add AC electrical characteristics. 2. Change AC timing characteristics. 3. Change DC electrical characteristics(ISB1) 1. Change the data Setup/Hold time. 2. Change the Access Time.(tCHQV, tCHQX, etc.) 3. Change the Clock Cycle Time.(MAX value of tKHKH) 4. Change the JTAG instruction coding. 1. Change the Boundary scan exit order. 2. Change the AC timing characteristics(-25, -20) 3. Correct the Overshoot and Undershoot timing diagrams. 1. Change the JTAG Block diagram 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) 1. Change the Maximum Clock cycle time. 2. Correct the 165FBGA package ball size. 1. Final spec release 1. Delete the x8 Org. part 1. Change the operating current parameter before after Isb1 -25 : 230 250 -20 : 200 230 -16 : 190 220 Draft Date July, 15 2001 De...




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