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2STA2121

STMicroelectronics

High power PNP epitaxial planar bipolar transistor

www.DataSheet4U.com 2STA2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ H...


STMicroelectronics

2STA2121

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www.DataSheet4U.com 2STA2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STC5949 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STA2121 Package TO-264 Packaging Tube Order code 2STA2121 November 2007 Rev 1 1/7 www.st.com 7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings www.DataSheet4U.com 2STA2121 1 Electrical ratings Absolute maximum rating Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value -250 -250 -6 -17 -34 220 -65 to 150 150 Unit V V V A A W °C °C Table 2. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 0.568 Unit °C/W 2/7 2STA2121 www.DataSheet4U.com Electrical characteristics 2 Electrical characteristics (Tcase = ...




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