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2STA2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ ■ ■ ■ ■
H...
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2STA2121
High power
PNP epitaxial planar bipolar
transistor
Preliminary data
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2STC5949 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
■
Audio power amplifier
TO-264
Description
The device is a
PNP transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology. The resulting
transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STA2121 Package TO-264 Packaging Tube
Order code 2STA2121
November 2007
Rev 1
1/7
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
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2STA2121
1
Electrical ratings
Absolute maximum rating
Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value -250 -250 -6 -17 -34 220 -65 to 150 150 Unit V V V A A W °C °C
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______________ __max Value 0.568 Unit °C/W
2/7
2STA2121
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Electrical characteristics
2
Electrical characteristics
(Tcase = ...