www.DataSheet4U.com
2STA1694
High power PNP epitaxial planar bipolar transistor
Features
■ ■ ■ ■ ■
High breakdown volt...
www.DataSheet4U.com
2STA1694
High power
PNP epitaxial planar bipolar
transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier
TO-3P
Description
The device is a
PNP transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology. The resulting
transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STA1694 Package TO-3P Packaging Tube
Order code 2STA1694
May 2008
Rev 2
1/7
www.st.com 7
Electrical ratings
www.DataSheet4U.com
2STA1694
1
Electrical ratings
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -120 -120 -6 -8 -16 80 -65 to 150 150 Unit V V V A A W °C °C
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case _________ __max Value 1.563 Unit °C/W
2/7
2STA1694
www.DataSheet4U.com
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Tes...