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PD - 95074A
IRFR3711ZPbF IRFU3711ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits
l l l
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
5.7m:
Qg
18nC
Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3711Z
I-Pak IRFU3711Z
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 93 66
Units
V
f f
A W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
370 79 39 0.53 -55 to + 175 W/°C °C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
1.9 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
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IRFR/U3711ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
20 ––– ––– ––– 1.55 ––– ––– ––– ––– ––– 48 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 4.5 6.2 2.0 -5.4 ––– ––– ––– ––– ––– 18 5.1 1.8 6.5 4.6 8.3 9.8 12 13 15 5.2 2160 700 360 ––– ––– 5.7 7.8 2.45 ––– 1.0 150 100 -100 ––– 27 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV/°C µA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
e e
VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A
See Fig. 16 VDS = 10V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current
Ã
d
Typ. ––– ––– –––
Max. 140 12 7.9
Units mJ A mJ
Repetitive Avalanche Energy
––– ––– ––– ––– ––– ––– ––– ––– 19 9.4
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
93
f
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs
A 370 1.0 28 14 V ns nC
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3711ZPbF
1000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
10
10
2.5V
1
2.5V 20µs PULSE WIDTH Tj = 25°C
20µs PULSE WIDTH Tj = 175°C
1 10 0.1 1 10
0.1 0.1 1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 30A VGS = 10V
ID, Drain-to-Source Current (Α)
T J = 25°C T J = 175°C
100
1.5
(Normalized)
10
1.0
VDS = 10V 20µs PULSE WIDTH
1 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRFR/U3711ZPbF
10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds Crss = C gd Coss = Cds + Cgd
12
SHORTED
ID= 12A
Ciss
VGS , Gate-to-Source Voltage (V)
10
VDS= 18V VDS= 10V
C, Capacitance (pF)
8
1000
Coss Crss
6
4
2
100 1 10 100
0 0 10 20 30 40
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0 T J = 175°C 10.0
ID, .