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IRFR3711ZPBF Dataheets PDF



Part Number IRFR3711ZPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFR3711ZPBF DatasheetIRFR3711ZPBF Datasheet (PDF)

www.DataSheet4U.com PD - 95074A IRFR3711ZPbF IRFU3711ZPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l l l HEXFET® Power MOSFET VDSS 20V RDS(on) max 5.7m: Qg 18nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRFR3711Z I-Pak IRFU3711Z Absolute Maximum Rati.

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www.DataSheet4U.com PD - 95074A IRFR3711ZPbF IRFU3711ZPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l l l HEXFET® Power MOSFET VDSS 20V RDS(on) max 5.7m: Qg 18nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRFR3711Z I-Pak IRFU3711Z Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 93 66 Units V ™ f f A W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g 370 79 39 0.53 -55 to + 175 W/°C °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 1.9 50 110 Units °C/W gà ––– ––– ––– Notes  through … are on page 11 www.irf.com 1 12/13/04 www.DataSheet4U.com IRFR/U3711ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 20 ––– ––– ––– 1.55 ––– ––– ––– ––– ––– 48 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 4.5 6.2 2.0 -5.4 ––– ––– ––– ––– ––– 18 5.1 1.8 6.5 4.6 8.3 9.8 12 13 15 5.2 2160 700 360 ––– ––– 5.7 7.8 2.45 ––– 1.0 150 100 -100 ––– 27 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A See Fig. 16 VDS = 10V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A Clamped Inductive Load e ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 140 12 7.9 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– ––– 19 9.4 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units 93 f Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs A 370 1.0 28 14 V ns nC Ù e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com www.DataSheet4U.com IRFR/U3711ZPbF 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 10 10 2.5V 1 2.5V 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 175°C 1 10 0.1 1 10 0.1 0.1 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance ID = 30A VGS = 10V ID, Drain-to-Source Current (Α) T J = 25°C T J = 175°C 100 1.5 (Normalized) 10 1.0 VDS = 10V 20µs PULSE WIDTH 1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 www.DataSheet4U.com IRFR/U3711ZPbF 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds Crss = C gd Coss = Cds + Cgd 12 SHORTED ID= 12A Ciss VGS , Gate-to-Source Voltage (V) 10 VDS= 18V VDS= 10V C, Capacitance (pF) 8 1000 Coss Crss 6 4 2 100 1 10 100 0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 100.0 T J = 175°C 10.0 ID, .


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