Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1228
DESCRIPTION ·With TO-220F package ·Complement to type 2SD1830 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -110 -100 -6 -8 -12 20 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=> IC=-4A ; IB=-8mA IC=-4A ; IB=-8mA VCB=-80V;IE=0 VEB=-5V;IC=0 IC=-4A ; VCE=-3V IC=-4A ; VCE=-5V 1500 MIN -110 -100
2SB1228
SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V
-1.0
-1.5 -2.0 -0.1 -3.0
V V mA mA
4000 20 MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=-4A VCC=-50V ,RL=12.5D 0.7 1.4 1.5 µs µs µs
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1228
Fig.2 Outline dimensions
3
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