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2SD1475 Dataheets PDF



Part Number 2SD1475
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SD1475 Datasheet2SD1475 Datasheet (PDF)

Power Transistors 2SD1475 www.DataSheet4U.com Silicon NPN triple diffusion planar type For power switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 8 4 1 35 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1.

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Power Transistors 2SD1475 www.DataSheet4U.com Silicon NPN triple diffusion planar type For power switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 8 4 1 35 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 50 0.35 1 0.3 60 70 20 1.2 1 V V MHz µs µs µs 320 min typ max 100 100 Unit µA µA V Rank classification Q 70 to 150 P 120 to 250 O 160 to 320 Rank hFE1 1 Power Transistors PC — Ta 80 4 IB=40mA TC=25˚C 10 (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SD1475 IC — VCE 12 VCE=4V IC — VBE Collector power dissipation PC (W) www.DataSheet4U.com (1) TC=Ta 70 60 50 40 30 20 10 0 0 20 40 60 (2) (3) Collector current IC (A) 3 25mA 20mA 15mA Collector current IC (A) 35mA 30mA 8 25˚C 6 TC=100˚C –25˚C (1) 2 10mA 4 1 5mA 2 0 80 100 120 140 160 0 1 2 3 4 5 6 7 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 –25˚C TC=100˚C 25˚C 10000 hFE — IC 1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=12V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 10 IE=0 f=1MHz TC=25˚C ton, tstg, tf — IC Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (µs) 3 Collector current IC (A) 10 ICP I.


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