Document
Power Transistors
2SD1475
www.DataSheet4U.com Silicon NPN triple diffusion planar type
For power switching
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 8 4 1 35 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
14.0±0.5
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 50 0.35 1 0.3 60 70 20 1.2 1 V V MHz µs µs µs 320 min typ max 100 100 Unit µA µA V
Rank classification
Q 70 to 150 P 120 to 250 O 160 to 320
Rank hFE1
1
Power Transistors
PC — Ta
80 4 IB=40mA TC=25˚C 10 (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W)
2SD1475
IC — VCE
12 VCE=4V
IC — VBE
Collector power dissipation PC (W)
www.DataSheet4U.com (1) TC=Ta
70 60 50 40 30 20 10 0 0 20 40 60 (2) (3)
Collector current IC (A)
3
25mA 20mA 15mA
Collector current IC (A)
35mA 30mA
8 25˚C 6 TC=100˚C –25˚C
(1)
2 10mA
4
1
5mA
2
0 80 100 120 140 160 0 1 2 3 4 5 6 7 8
0 0 0.5 1.0 1.5 2.0 2.5 3.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 –25˚C TC=100˚C 25˚C 10000
hFE — IC
1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03
fT — IC
VCE=12V f=10MHz TC=25˚C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 0.01 0.03 TC=100˚C 25˚C –25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob — VCB
10000 10 IE=0 f=1MHz TC=25˚C
ton, tstg, tf — IC
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25˚C
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
Switching time ton,tstg,tf (µs)
3
Collector current IC (A)
10 ICP I.