BFS67

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·High Current-Gain—Bandwidth Product fT= 1 GHz TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For a wide range of RF applications such as: mixers and oscillators in TV tuners and RF communications equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 25 mA ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.3 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BFS67 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFS67 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.01 μA hFE-1 DC Current Gain IC= 2mA ; VCE= 1V 25 hFE-2 DC Current Gain IC= 25mA ; VCE= 1V 25 fT Current-Gain—Bandwidth Product IC= 2mA ; VCE= 5V; f= 500MHz 1 GHz fT Current-Gain—Bandwidth Product IC= 25mA ; VCE= 5V; f= 500MHz 1.6 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.8 1.5 pF Cre Feedback Capacitance NF Noise Figure IC= 1mA ; VCB= 5V; f= 1MHz IC= 2mA ; VCE= 5V;RS= 50Ω f= 500MHz 0...