isc Silicon NPN RF Transistor
DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Mini...
isc Silicon
NPN RF
Transistor
DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF
communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
200
mA
2.25
W
175
℃
Tstg
Storage Temperature Range
-65~150
℃
BFQ591
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN RF
Transistor
BFQ591
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CES Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0
15
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1m A ; IE= 0
20
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1m A ; IC= 0
3
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
hFE
DC Current Gain
IC= 70mA ; VCE= 8V
60
250
fT
Current-Gain—Bandwidth Product
IC= 70mA ; VCE= 12V; f= 1GHz
7
GHz
PG
Power Gain
IC= 70mA;VCE= 12V; f= 900MHz
11
dB
PG
Power Gain
IC= 70mA;VCE= 12V; f= 2GHz
5.5
dB
Cre
Feedback Capacitance
IE= 0 ; VCB= 12V; f= 1MHz
0.8
pF
︱S21e︱2 Insertion Power Gain
IC= 70mA ; VCE= 12V; f= 1GHz
10...