INCHANGE Semiconductor
www.DataSheet4U.com
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3110
DESCRI...
INCHANGE Semiconductor
www.DataSheet4U.com
isc RF Product Specification
isc Silicon
NPN RF
Transistor
2SC3110
DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product
APPLICATIONS ·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
15
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
30
mA
ICP
Collector Current-Peak
50
mA
PC
Collector Power Dissipation @TC=25℃
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc RF Product Specification
isc Silicon
NPN RF
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3110
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
1
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
fT
Current-Gain—Bandwidth Product
IE= -10mA ; VCE= 10V
4.5
GHz
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
1.2
pF
︱S21e︱2
Insertion Power Gain IC= 20mA; VCE= 10V; f= 0.8GHz
9
12
dB
GUM
Power Gain
12
14
dB
NF
Noise Figure
IC= 5mA; VCE= 10V; f= 0.8GHz
1.3
2.5
dB
isc Website:www.iscsemi.cn
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