isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC2757
DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Produ...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC2757
DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.15
W
125
℃
Tstg
Storage Temperature Range
-55~125
℃
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isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC2757
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
0.5
V
0.1 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
60
240
fT
Current-Gain—Bandwidth Product
IC= 5mA ; VCE= 10V
800 1100
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
1.5 pF
rbb’ CC Base Time Constant
IC= 5mA ; VCB= 10V;f= 31.9MHz
10
15
ps
hFE Classifications
Marking T32
T33
T34
hFE
60-120 90-180 120-240
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented...