PMD16K100

Inchange Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ¡¤ With TO-3 package ¡¤ High DC current gain ¡¤ DARLINGTON APPLICATIONS ¡¤ Designed for use in power switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION PMD16K60/80/100 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER PMD16K60 VCBO Collector-base voltage PMD16K80 PMD16K100 PMD16K60 VCEO Collector-emitter voltage PMD16K80 PMD16K100 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current(peak) Base current Power dissipation Max. operating Junction temperature Storage temperature TC=25¡æ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 20 40 0.5 200 200 -65~200 ¡æ ¡æ V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT ¡æ /W Inchange Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER PMD16K60 V(BR)CEO Collector-emitter breakdown voltage PMD16K80 PMD16K100 VCEsat VBEsat VBE hFE ICER IEBO fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage DC current gain Collector cut-off current Emitter cut-off current Transition frequency Output capacitance IC=10A ;IB=40mA IC=10A ;IB=40mA IC=10A ; VCE=3V IC=10A ; VCE=3V VCE=Rated VCEO;...