isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD200
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(B...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
3DD200
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B&W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
PC
Collector Power Dissipation@TC=75℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.5 ℃/W
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
INCHANGE Semiconductor
3DD200
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 150V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 5V
tf
Fall Time
IC= 3A; IB1= 0.2A,...