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3CD6D

PNP Transistor

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·DC Current Gain- : hFE=10-180@IC= -2.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ·Low speed switching ·P...

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