SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1009
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SB1009
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1380 APPLICATIONS ·For use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -40 -32 -5 -2 0.1 W UNIT V V V A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB1009
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
Collector-emitter breakdown voltage
IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-2.0A ;IB=-0.2A VCB=-20V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-500mA ; VCE=-5V IC=-500mA ; VCE=-5V f=1MHz ; VCB=-10V
-32
V
Collector-emitter saturation voltage
-0.8
V
Base-emitter saturation voltage
-2.0
V
Collector cut-off current
-1
µA
Emitter cut-off current
-1
µA
DC current gain
40
DC current gain
82
390
Transition frequency
100
MHz
Collector output capacitance
50
pF
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power Tran...