2SB1007

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1007 DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -0.7 1.2 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-3V IE=0; VCB=-10V;f=1MHz IE=50mA ; VCE=-10V 82 14 100 MIN -80 -80 -5 -0.2 TYP. 2SB1007 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE COB fT MAX UNIT V V V -0.4 -0.5 -0.5 390 20 V µA µA pF MHz hFE Classifications P 82-180 Q 120-270 R 180-390 2 SavantIC Semiconductor www.DataSheet4U.com ...