2SB697K

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION ·With TO-3 package ·Complement to type 2SD733/733K ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SB697 VCBO Collector-base voltage 2SB697K 2SB697 VCEO Collector-emitter voltage 2SB697K VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -160 -6 -12 -20 100 150 -40~150 V A A W Open emitter -180 -140 V CONDITIONS VALUE -160 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2SB697 2SB697K SYMBOL MIN TYP. MAX UNIT 2SB697 V(BR)CEO Collector-emitter breakdown voltage 2SB697K IC=-50mA ;IB=0 -140 V -160 2SB697 V(BR)CBO Collector-emitter breakdown voltage 2SB697K IC=-5mA ;IE=0 -160 V -180 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage IE=-5mA ;IC=0 IC=-6A; IB=-0.6A IC=-1A ; VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V -6 V Collector-emitter saturation voltage -1.0 -...