SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB631 2SB631K
DESCRI...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SB631 2SB631K
DESCRIPTION ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SB631 VCBO Collector-base voltage 2SB631K 2SB631 VCEO Collector-emitter voltage 2SB631K VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 8 150 -55~150 Open collector Open base -120 -5 -1 -2 1 W V A A Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SB631 IC=-1mA; RBE=@ 2SB631K 2SB631 IC=-10µA ;IE=0 2SB631K IE=-10µA ;IC=0 IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V CONDITIONS SYMBOL
2SB631 2SB631K
MIN -100
TYP.
MAX
UNIT
V(BR)CEO
V -120 -100 V -120 -5 -0.4 -1.2 -1 -1 60 20 110 30 MHz pF 320 V V V µA µA
V(BR)CBO
Collector-base breakdown voltage
V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT CO...