SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB536
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SB536
DESCRIPTION ·With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -130 -120 -5 -1.5 -3.0 -0.3 1.5 W UNIT V V V A A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB536
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-120
V
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
µA
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
25
hFE-2
DC current gain
IC=-0.3A ; VCE=-5V
40
250
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
35
pF
...