2SB434

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB434 DESCRIPTION ·With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -3 1.5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage CONDITIONS IC=-5mA ,IB=0 MIN -50 TYP. SYMBOL V(BR)CEO 2SB434 MAX UNIT V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.2 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 µA hFE DC current gain IC=-0.5A ; VCE=-1V 40 240 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 90 pF fT Transition frequency ...