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RJK0353DSP Dataheets PDF



Part Number RJK0353DSP
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET Power Switching
Datasheet RJK0353DSP DatasheetRJK0353DSP Datasheet (PDF)

www.DataSheet4U.com RJK0353DSP Silicon N Channel Power MOS FET Power Switching REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5 6 7 8 D D D D 8 12 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag.

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www.DataSheet4U.com RJK0353DSP Silicon N Channel Power MOS FET Power Switching REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5 6 7 8 D D D D 8 12 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 ±20 18 144 18 16 25.6 2.0 62.5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 1 of 6 RJK0353DSP Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.5 5.9 41 2180 420 135 2.0 15 5.4 3.0 8.5 4.0 46.4 6.0 0.8 20 Max — ± 0.1 1 2.5 5.9 8.3 — — — — — — — — — — — — 1.04 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 9 A, VGS = 10 V Note4 ID = 9 A, VGS = 4.5 V Note4 ID = 9 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 9 A VGS = 10 V, ID = 9 A VDD ≅ 10 V RL = 1.11 Ω Rg = 4.7 Ω IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/ dt = 100 A/ µs Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 2 of 6 RJK0353DSP Main Characteristics www.DataSheet4U.com Power vs. Temperature Derating 4.0 500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s 10 µs Maximum Safe Operation Area Channel Dissipation Pch (W) 100 Drain Current ID (A) 3.0 PW 10 DC = 1m 10 10 0µ s s Op 2.0 era ms tio n( 1 1.0 Operation in this area is limited by RDS(on) Ta = 25 °C 1 shot Pulse PW ≤ 1 Note 0s 5 ) 0.1 0.01 0.1 0 50 100 150 200 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 50 4.5 V 10 V 3.2 V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 3.0 V 30 2.8 V ID (A) Drain Current 40 40 30 Drain Current 20 20 25°C –25°C 10 VGS = 2.6 V 10 Tc = 75°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 100 Pulse Test Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 120 30 80 10 VGS = 4.5 V 3 10 V 40 ID = 10 A 5A 2A 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 3 of 6 RJK0353DSP Static Drain to Source on State Resistance vs. Temperature 10000 3000 www.DataSheet4U.com 20 Pulse Test Static Drain to Source on State Resistance RDS (on) (mΩ) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 16 Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 12 ID = 2 A, 5 A, 10 A 8 VGS = 4.5 V Coss Crss 4 10 V 0 –25 0 25 50 2 A, 5 A, 10 A 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 50 Dynamic Input Characteristics VDS (V) 50 Reverse Drain Current IDR (A) ID = 18 A VGS 16 VDD = 25 V 10 V Pulse Test 10 V 40 5V 40 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage 30 20 8 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 20 40 60 80 4 10 0 0 100 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 50 IAP = 16 A 40 VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G164.


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