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RJK0353DSP
Silicon N Channel Power MOS FET Power Switching
REJ03G1648-0401 Rev.4.01 Apr 24, 2008
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V) • Pb-free • • • •
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
5 76 34
5 6 7 8 D D D D
8
12
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR
Note1
Ratings 30 ±20 18 144 18 16 25.6 2.0 62.5 150 –55 to +150
Unit V V A A A A mJ W °C/W °C °C
IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 1 of 6
RJK0353DSP
Electrical Characteristics
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(Ta = 25°C)
Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.5 5.9 41 2180 420 135 2.0 15 5.4 3.0 8.5 4.0 46.4 6.0 0.8 20 Max — ± 0.1 1 2.5 5.9 8.3 — — — — — — — — — — — — 1.04 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 9 A, VGS = 10 V Note4 ID = 9 A, VGS = 4.5 V Note4 ID = 9 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 9 A VGS = 10 V, ID = 9 A VDD ≅ 10 V RL = 1.11 Ω Rg = 4.7 Ω IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/ dt = 100 A/ µs
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test
REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 2 of 6
RJK0353DSP
Main Characteristics
www.DataSheet4U.com Power vs. Temperature Derating
4.0 500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s
10 µs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
100
Drain Current ID (A)
3.0
PW
10
DC
=
1m
10
10
0µ
s
s
Op
2.0
era
ms
tio
n(
1
1.0
Operation in this area is limited by RDS(on) Ta = 25 °C 1 shot Pulse
PW
≤ 1 Note 0s 5 )
0.1 0.01 0.1
0
50
100
150
200
0.3
1
3
10
30
100
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics
50 4.5 V 10 V 3.2 V Pulse Test 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
3.0 V 30 2.8 V
ID (A) Drain Current
40
40
30
Drain Current
20
20 25°C –25°C
10
VGS = 2.6 V
10
Tc = 75°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
160
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) (mΩ)
100 Pulse Test
Drain to Source Saturation Voltage VDS (on) (mV)
Pulse Test
120
30
80
10 VGS = 4.5 V 3 10 V
40
ID = 10 A
5A
2A
0
4
8
12
16
20
1 1
3
10
30
100
300 1000
Gate to Source Voltage
VGS (V)
Drain Current
ID
(A)
REJ03G1648-0401 Rev.4.01 Apr 24, 2008 Page 3 of 6
RJK0353DSP
Static Drain to Source on State Resistance vs. Temperature
10000 3000
www.DataSheet4U.com 20 Pulse Test
Static Drain to Source on State Resistance RDS (on) (mΩ)
Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
16
Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30
12 ID = 2 A, 5 A, 10 A 8 VGS = 4.5 V
Coss Crss
4 10 V 0 –25 0 25 50
2 A, 5 A, 10 A
75
100 125 150
Case Temperature
Tc
(°C)
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
VGS (V)
20 50
Dynamic Input Characteristics
VDS (V)
50
Reverse Drain Current IDR (A)
ID = 18 A
VGS 16 VDD = 25 V 10 V
Pulse Test 10 V 40 5V
40
Drain to Source Voltage
30
VDS
12
Gate to Source Voltage
30
20
8
20 VGS = 0, –5 V
10
VDD = 25 V 10 V 0 20 40 60 80
4
10
0
0 100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
50 IAP = 16 A 40 VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 30
20
10 0 25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G164.