RJK0332DPB

www.DataSheet4U.com RJK0332DPB Silicon N Channel Power MOS FET Power Switching REJ03G1641-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch θch-C Tch Tstg Note3 Ratings 30 ±20 35 140 35 15 22.5 45 2.78 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1641-0400 Rev.4.00 Apr 10, 2008 Page 1 of 6 RJK0332DPB Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Item Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Qrr Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance ...