RJK0316DSP

www.DataSheet4U.com RJK0316DSP Silicon N Channel Power MOS FET Power Switching REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 4 G 5 6 7 8 D D D D 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 12 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Note1 Ratings 30 +16/–12 16 128 16 16 25.6 2.0 62.5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 1 of 7 RJK0316DSP Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 5.3 7.2 40 2080 650 100 1.4 13.8 5.3 2.9 6.5 5.0 45 4.0 0.81 30 Max — ± 0.1 1 2.5 6.4 9.4 — — — — — — — — — — — — 1.06 — Unit V µA ...