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RJK0305DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1353-0900 Rev.9.00 Apr 19, 2006
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.7 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 D 5 4 G 3...
