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STH12NA60/FI STW12NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH12NA60 STH12...
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STH12NA60/FI STW12NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STH12NA60 STH12NA60FI STW12NA60
s s s s s s s
V DSS 600 V 600 V 600 V
R DS( on) < 0.6 Ω < 0.6 Ω < 0.6 Ω
ID 12 A 7A 12 A
TO-247
TYPICAL RDS(on) = 0.44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218
1
3 2 1
3
3 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
2
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V
o o
600 600 ± 30...