2SA1389

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -7 -12 120 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;IB=0 IE=-50µA; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-1A ; VCE=-10V 60 40 MIN -160 -7 2SA1389 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V -1.8 -1.7 -50 -1 -...