S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parall...
S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
www.DataSheet4U.com
January 1997
Features
6A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
PACKAGING AVAILABILITY PART NUMBER HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS PACKAGE TO-220AB TO-262AA TO-263AB BRAND G3N60C3D G3N60C3D G3N60C3D
JEDEC TO-262AA
COLLECTOR (FLANGE)
A
EMITTER COLLECTOR GATE
JEDEC TO-263AB
M A
A
COLLECTOR (FLANGE) GATE EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in t...