DatasheetsPDF.com

HN7G02FE Dataheets PDF



Part Number HN7G02FE
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Power Management Switch Applications
Datasheet HN7G02FE DatasheetHN7G02FE Datasheet (PDF)

HN7G02FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G02FE Unit: mm Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Q1 (transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V .

  HN7G02FE   HN7G02FE



Document
HN7G02FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G02FE Unit: mm Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Q1 (transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2N1F Weight:0.003g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P (Note 1) Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit (top view) 6 5 4 FT Q1 Q2 1 2 3 1 2007-11-01 HN7G02FE Q1 (Transistor) Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 mA IC = −5 mA, IB = −0.25 mA ⎯ Min ⎯ ⎯ 120 ⎯ 3.29 Typ. ⎯ ⎯ ⎯ −0.1 4.7 Max −100 −100 400 −0.3 6.11 V kΩ Unit nA nA Q2 (MOSFET) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 μA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min ⎯ 20 ⎯ 0.7 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 50 4 11.0 3.3 9.3 0.16 0.19 Max 1 ⎯ 1 1.3 ⎯ 12 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF μs Switching Time Test Circuit (a) Switching time test circuit 2.5 V IN 50 Ω 0 10 μS VIN RL ID OUT VDD = 3 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10% VDD 2 2007-11-01 HN7G02FE Q1 (Transistor) www.DataSheet4U.com (mA) (μA) 3 2007-11-01 HN7G02FE Q2 (MOSFET) www.DataSheet4U.com 4 2007-11-01 HN7G02FE Q2 (MOSFET) www.DataSheet4U.com 5 2007-11-01 HN7G02FE Q1, Q2 Common P* – Ta 200 www.DataSheet4U.com (mW) POWER DISSIPATION PC 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) *:Total rating 6 2007-11-01 HN7G02FE www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality.


HN7G01FU HN7G02FE HN7G02FU


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)