P5506BVG

NIKO-SEM www.DataSheet4U.com N-Channel Logic Level Enhancement Mode Field Effect Transistor P5506BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 60 RDS(ON) 55m ID 5.5A D 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 1 SYMBOL VDS VGS LIMITS 60 ±20 5.5 4.5 20 2.5 1.3 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W °C SYMBOL RθJA TYPICAL MAXIMUM 50 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source Resistance1 On-State IDSS ID(ON) VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 4.5A RDS(ON) gfs VGS = 10V, ID = 5.5A VDS = 10V, ID = 5.5A 20 55 42 14 75 55 m S 60 1.0 1.5 2.5 ±100 1 10 µA A V nA MIN TYP MAX UNIT Forward Transconductance1 1 SEP-30-2004 NIKO-SEM www.DataSheet4U.com N-Channel Logic Level Enhancement Mode Field Effec...