2N6672

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6671 2N6672 2N6673 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6671 VCBO Collector-base voltage 2N6672 2N6673 2N6671 VCEO Collector-emitter voltage 2N6672 2N6673 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 150 200 -65~200 V A A A W V V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6671 VCEO(SUS) Collector-emitter sustaining voltage 2N6672 2N6673 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6671 ICEV Collector cut-off current 2N6672 2N6673 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency IC=5A; IB=1A IC=8A ;IB=4A IC=5A; IB=1A IC=0.2A ;IB=0 SYMBOL 2N6671 2N6672 2N6673 CONDITIONS MIN 300 350 400 TYP. MAX UNIT V 1.0 2.0 1.6 V V V ...