SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 ...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing
regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N6654
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 500 350 6 20 30 150 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2N6654
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
350
V
V(BR)CBO
Collector-emitter breakdown voltage
IC=1mA ; IE=0
500
V
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=2A
1.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A; IB=3A
2.2
V
VBEsat
Base-emitter saturation voltage
IC=15A; IB=3A VCE=500V;VBE(off)=-1.5V TC=150 VEB=6V; IC=0
1.8 0.1 2.0 0.1
V
ICEV
Coll...