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SS5P10

Vishay Siliconix

(SS5P9 / SS5P10) High Current Density Surface Mount Schottky Barrier Rectifiers

New Product SS5P9 & SS5P10 Vishay General Semiconductor www.DataSheet4U.com High Current Density Surface Mount Schottk...


Vishay Siliconix

SS5P10

File Download Download SS5P10 Datasheet


Description
New Product SS5P9 & SS5P10 Vishay General Semiconductor www.DataSheet4U.com High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES TM eSMP K Series Very low profile - typical height of 1.1 mm Ideal for automated placement Low forward voltage drop, low power losses 1 High efficiency Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Halogen-free 5.0 A 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A IR TJ max. 90 V, 100 V 150 A 0.649 V 4.5 µA 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C Operating junction and storage temperature r...




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