EN29LV160J

EN29LV160J EN29LV160J ******PRELIMINARY DRAFT****** www.DataSheet4U.com 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES 0. 3.0V, single power supply operation - Minimizes system level power requirements Manufactured on 0.28 µm process technology High performance - Access times as fast as 70 ns Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. - High performance program/erase speed Byte program time: 8µs typical Sector erase time: 200ms typical Chip erase time: 3.5s typical JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode 0.28 µm double-metal double-poly triple...