NPN Silicon Transistor
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
KSH13007
¨€ HI...
Description
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
KSH13007
¨€ HIGH VOLTAGE SWITCH MODE APPLICATION ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡80W VCBO ¡ª¡ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡700V VCEO¡ª¡ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡9V IC¡ª¡ªCollector Current£¨ DC£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡8A IC¡ª¡ªCollector Current£¨ Pulse£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡16A IB¡ª¡ªBase Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡4A TO-220
1¨D Base£¬ B
2¨D Collector£¬ C 3¨D Emitter, E
¨€ µç²ÎÊý £¨ Ta=25¡æ £©
Symbol Characteristics Collector-Emitter Sustaining Voltage Emitter-Base Cutoff Current Min 400 1 Typ Max Unit V mA Test Conditions
BVCEO IEBO HFE£¨ 1£© HFE£¨ 2£© VCE(sat1) VCE(sat2) VCE(sat3) VBE(sat1) VBE(sat2) Cob fT tON tSTG tF
IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A
DC Current Gain Collector- Emitter Saturation Voltage
10 5
40 30 1 2 3 V V V V V pF 1.6 3 0.7 uS uS uS
IC=2A, IB =400mA IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCB=10V, f=0.1MHz z VCE=10V, IC=500mA Vcc=125V,Ic=5A IB1=IB2=1A
Base- Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On time Storage Time Fall Time 4 110
1.2 1.6
¨€ hFE Classification H1 10¡ª 16 H2 14¡ª ...
Similar Datasheet