SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N6495
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2N6495
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wideband amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 80 7 10 70 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 4.37 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2N6495
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS) VCEsat VBEsat VBE ICEV ICEO IEBO hFE fT
Collector-emitter sustaining voltage
IC=0.1 A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A IC=10A ; VCE=3V VCE=150V;VBE(off)=-1.5V TC=150 VCE=40V; IB=0 VEB=7V; IC=0 IC=10A ; VCE=3V IC=1 A ; VCE=10V
80
V
Collector-emitter saturation voltage
1.5
V
Base-emitter saturation voltage
2.0
V
Base -emitter on voltage
2.8 0.1 1.0 0.1
V
Collector cut-off current
mA
Collector cut-off current
mA
Emitter cut-off current
0....